cystech electronics corp. spec. no. : c739h8 issued date : 2009.12.09 revised date : 2010.06.28 page no. : 1/8 MTN6515H8 cystek product specification n-channel logic level enhancement mode power mosfet MTN6515H8 bv dss 150v i d 20a r dson(max) 65m description the MTN6515H8 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. features ? single drive requirement ? low on-resistance ? fast switching characteristic ? dynamic dv/dt rating ? repetitive avalanche rated ? pb-free lead plating package symbol outline MTN6515H8 power pak (edfn5 6) pin 1 g gate d drain s source
cystech electronics corp. spec. no. : c739h8 issued date : 2009.12.09 revised date : 2010.06.28 page no. : 2/8 MTN6515H8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 150 gate-source voltage v gs 16 v continuous drain current @ t c =25 c 20 continuous drain current @ t c =100c i d 15 pulsed drain current i dm 80 *1 avalanche current i as 20 a avalanche energy @ l=0.1mh, i d =10a, r g =25 e as 5 repetitive avalanche energy @ l=0.05mh e ar 2.5 *2 mj t c =25 60 total power dissipation t c =100 p d 32 w operating junction and storage temp erature range tj, tstg -55~+175 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 2.5 c/w thermal resistance, junction-to-ambient, max r th,j-a 50 *3 c/w note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% 3. surface mounted on 1 in2 copper pad of fr-4 board, 125 c/w when mounted on minimum copper pad characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static v gs(th) 0.45 0.75 1.20 v v ds =v gs , i d =250 a i gss - - 100 na v gs = 12, v ds =0 - - 1 v ds =120v, v gs =0 i dss - - 25 a v ds =100v, v gs =0, t j =125 c i d(on) *1 20 - - a v ds =10v, v gs =10v - 40 55 m v gs =10v, i d =15a - 50 65 v gs =5v, i d =10a r ds(on) *1 - 60 75 v gs =3v, i d =3a g fs *1 - 25 - s v ds =5v, i d =10a dynamic ciss - 7660 - coss - 725 - crss - 420 - pf v gs =0v, v ds =25v, f=1mhz
cystech electronics corp. spec. no. : c739h8 issued date : 2009.12.09 revised date : 2010.06.28 page no. : 3/8 MTN6515H8 cystek product specification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions qg *1, 2 - 107 - qgs *1, 2 - 18 - qgd *1, 2 - 60 - nc i d =10a, v ds =80v, v gs =5v t d(on) *1, 2 - 20 - tr *1, 2 - 115 - t d(off) *1, 2 - 330 - t f *1, 2 - 380 - ns v ds =75v, i d =1a, v gs =4.5v, r g =6 source-drain diode i s *1 - - 20 i sm *3 - - 80 a v sd *1 - - 1.3 v i f =i s , v gs =0v trr - 60 - ns qrr - 130 - nc i f =20a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature.
cystech electronics corp. spec. no. : c739h8 issued date : 2009.12.09 revised date : 2010.06.28 page no. : 4/8 MTN6515H8 cystek product specification recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c739h8 issued date : 2009.12.09 revised date : 2010.06.28 page no. : 5/8 MTN6515H8 cystek product specification typical characteristics
cystech electronics corp. spec. no. : c739h8 issued date : 2009.12.09 revised date : 2010.06.28 page no. : 6/8 MTN6515H8 cystek product specification typical characteristics(cont.)
cystech electronics corp. spec. no. : c739h8 issued date : 2009.12.09 revised date : 2010.06.28 page no. : 7/8 MTN6515H8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c739h8 issued date : 2009.12.09 revised date : 2010.06.28 page no. : 8/8 MTN6515H8 cystek product specification power pak (edfn5 6) dimension 8-lead power pak plastic package cystek package code: h8 marking: device name date code *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.0315 0.0394 0.80 1.00 e 0.2253 0.2332 5.70 5.90 a1 0.0000 0.0020 0.00 0.05 e 1.27 bsc b 0.0138 0.0194 0.35 0.49 h 0.2352 0.2431 5.95 6.15 c 0.0089 0.0112 0.224 0.284 l1 0.0040 0.0198 0.10 0.50 d 0.1937 0.2016 4.90 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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